Advanced Thin Film Processes & Materials for FEOL & Interconnect Applications, 2015 — 2019

The semiconductor industry has relied on CVD and PVD technologies to meet much of the requirements in thin film depositions. Along with these process technologies, many standard materials, such as SiO2, Al and Ti, have been relied on to meet a majority of the industry's needs. However, now the industry is facing significant change—starting with the conversion to FinFETS and VNAND, as well as high mobility channels, spacers, novel gates, and high-κ gate dielectrics, all growing rapidly.

These new devices are leading to the adoption of many advanced deposition precursors and processes including ALD, MOCVD, FCVD, Gapfill/SOD, electroplating and others.  This report examines the applications for advanced precursors and forecasts demand to 2020.

Advanced Deposition Precursors

advanced precurors market

The sixth edition of Advanced Thin Film Processes & Materials for FEOL and Interconnect Applications, 2015—2019 includes:

  • Detailed forecasts by product and application to 2019
  • Detailed overview of the application technology

Learn more about Advanced Thin Film Processes & Materials for FEOL & Interconnect Applications

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  • Report Contents

    1. Executive Summary

    • 2015—2019 consumption of materials
    • Growth rates by deposition technology
    • Regional distribution of depositions—FEOL, MOL, BEOL

    2. Methodology and Background

    3. Forecast Drivers

    • Segmentation by device type
    • Introduction of EUV
    • Review ITRS
    • Map unit operations by device type

    4. BEOL Deposition Technology

    • Review of applications
      • Low-K and barriers
      • Barrier (CVD and ALD)
      • Seeds/seed enhancement
      • Caps (CVD and ALD)
    • Device-based analysis for 14nm and 10nm with insights beyond

    5. Assessment of FEOL Deposition Technology

    • Review of applications
      • High-k capacitors
      • Metal gates
      • High-k gate dielectrics
      • Strain
      • STI/PMD
      • Spacers
      • FinFETS
      • High mobility channels
      • DRAM FEOL structures
      • NAND FEOL structures
      • NAND 3D structures


    By application and year in terms of value and volume:

    • ALD
    • CVD
    • ECD
    • PVD
    • SOD

    7. Forecasts by Device Types

    • DRAM
    • NAND—2D and 3D
    • MPU
    • ASIC

    8. Leading Suppliers & Business Assessment

    • Leading suppliers by material
    • Influence of tool producers
    • Competitive review

    New materials included in this year's report are metals including: Ti, Ta, Mo, Co, Cu, Ru, Al, Mn